Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory.
FeRAM's advantages over flash include: lower power usage, faster write performance and a much greater maximum read/write endurance. FeRAMs have data retention times of more than 10 years at +85 °C (up to many decades at lower temperatures).
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